This research aims to enhance the optoelectronic properties of Ag-doped ZrS through electrochemical deposition. Different characterization techniques were employed to examine the optical, structural, and morphological properties of the synthesized material, with results showing that the absorbance of ZrS and Ag-doped ZrS changes with the applied voltage, enhancing carrier concentration and mobility at higher voltages to enhance absorption properties. ZrS displays a bandgap energy of 2.00 eV, showing its potential as a semiconductor material, while Ag-doped ZrS results in higher bandgap energies between 2.15 eV and 2.50 eV, leading to modifications in its electronic characteristics. The crystal planes of 101, 103, 111, and 112 are identified by precise 2? angles of 23.59°, 34.91°, 48.42°, and 62.62° for ZrS and 19.64°, 33.61°, 44.48°, and 63.31° for Ag-doped ZrS. Altering voltages (10, 12, 14 V) affect the electrical structure in XRD analysis, influencing peak positions and intensities. A more evenly distributed Ag layer, preserving surface smoothness, results from lowering the voltage while introducing Ag. The interaction of Ag and ZrS leads to localized structural changes. As the voltage increases, the surface roughness of Ag-doped ZrS increases more than the undoped ZrS. The resistivity values decrease as the voltage increases, suggesting enhanced conduction and more charge carriers. The increased conductivity values (4.34, 4.58, 4.71 and 4.78 S/m) indicate that higher voltage enhances conductivity, benefiting applications needing efficient charge transfer